Recently, Qualcomm announced that it is going to partner with Samsung in order to manufacture its upcoming chipset, Snapdragon 835. This chipset is expected to come within the first half of 2017.
This chipset is will feature Samsung’s new 10nm FinFET technology. As per Qualcomm, this technology consumes 40% less power yet delivers 27% better performance. Further, it is 30% more area efficient. Manufacturers will be able to integrate other components due to this reduced footprint.
Snapdragon 835 will also integrate Quick Charge 4 technology. As per Qualcomm, Quick Charge 4 is 30% more efficient and delivers 20% faster charging than Quick Charge 3. Further, it comes with USB-C and USB Power Delivery Standard supports.
Moreover, this technology comes with Intelligent Negotiation for Optimum Voltage (INOV) which gives real-time thermal management. In the meanwhile, Qualcomm is also introducing two power management ICs, the SMB1380, and the SMB1381. These ICs with low impedance can deliver 95% peak efficiency. Other features include battery differential sensing and other fast charging features.
